Raman Mapping Devoted to the Phase Transformation and Strain Analysis in Si Micro-Indentation
Article 2002 en
Authors
FD
F. Demangeot
PP
Pascal Puech
VD
Vladislav Domnich
Abstract
1 min read
Using Raman mapping to obtain relevant information on strain and distribution of various Si phases around micro and nano-indentations has several advantages, as is shown by the authors of this paper. Strain is obtained through phonon shift, while the high-pressure Si phases are identified by their signatures at respective wavenumbers.
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