Dielectric materials with a very low dielectric constant, k, will be required to overcome problems such as cross-talk and propagation delay in future generations of microprocessors, whose features are becoming increasingly smaller. Here pure-silica zeolite is examined as an alternative low-k material. Thin films prepared by in-situ crystallization (see Figure) and a spin-on process are compared.
Jae Young Kim, Sung Hyuk Park, Yeong Jae Kim, Jaehyun Kim, Sung Kyun Choi, Hee Ryeong Kwon, Yoon Jung Lee, Seung Ju Kim, Dongmin Shin, Boon Siang Yeo, Beom-Jong Kim, Hyung‐Suk Jung, Ho Won Jang
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