Preparation and characterization of oriented III–V nitride thin films by nebulized spray pyrolysis

Thin films of GaN, InGaN, AlGaN and AlN on Si(100) as well as on Al2O3(0001) single crystalline substrates have been deposited at 1123, 1023, 1173 and 1173K, respectively, by employing the simple inexpensive technique of nebulized spray pyrolysis. GaN films deposited on Si are polycrystalline where as the films deposited on Al2O3 are epitaxial. GaN epitaxial films show cathodoluminescence characteristics. Photoluminescence studies show that all the films are of high quality.