Polarity Switching and Transient Responses in Single Nanotube Nanofluidic Transistors
Article 2005 en
Authors
RF
Rong Fan
MY
Min Yue
RK
Rohit Karnik
Abstract
1 min read
We report the integration of inorganic nanotubes into metal-oxide-solution field effect transistors (FETs) which exhibit rapid field effect modulation of ionic conductance. Surface functionalization, analogous to doping in semiconductors, can switch the nanofluidic transistors from p-type to ambipolar and n-type field effect transistors. Transient study reveals the kinetics of field effect modulation is controlled by ion-exchange step. Nanofluidic FETs have potential implications in subfemtoliter analytical technology and large-scale nanofluidic integration.
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