Plasma doping: theoretical simulation and use of safer gas

Plasma doping (PD) is an alternative technique to form shallow junctions in deep sub-micrometer microelectronic devices. The use of theoretical simulation to derive the energy distribution of implanted ions can lessen the time required for design of PD experiments and recipes. It also provides useful information on the dopant depth profiles. The second part of the paper describes the use of a boron-containing gas that is much less toxic than diborane to form shallow junctions.