Pinning of 90{degrees} domain boundaries at interface dislocations in BaTiO{sub 3}/LaAlO{sub 3} (100)

Epitaxially grown BaTiO{sub 3} thin films have potential applications in microelectronics and integrated photonics. The ferroelectric property of this material is largely determined by the domain structure. It is believed that the structure of the substrate would have profound effect on the quality of BaTiO{sub 3} epitaxial thin films. This paper reports our studies on the pinning of 90{degrees} domain boundaries at interface dislocations. Epitaxial BaTiO{sub 3} thin films were deposited on single crystalline LaAlO{sub 3} (100 substrates at 800 {degrees}C) by metal-organic chemical vapor deposition (MOCVD). Cross-section specimens of the films were studied at 200 kV using an JEOL 2010 high-resolution transmission electron microscope (HRTEM).