Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics
Article 2012 en
Authors
RY
Ruomeng Yu
LD
Lin Dong
CP
Caofeng Pan
Abstract
1 min read
The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
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