Physical modeling of RTD-based CNN cells

Resonant tunneling diodes (RTDs) have intriguing properties which make them a primary nanoelectronic device for both analog and digital applications. We present a physics-based model of the RTD and study the universal cell circuit for Boolean CNNs which is proposed in a companion paper (Dogaru et al., 2000). In this circuit, the negative differential resistance of the RTD is fully exploited. Spice simulations confirm that it is capable of realizing a large class of linearly not separable Boolean functions.