A nondestructive observation of oxidationinduced stacking faults (OSF) generated during thermal oxidation processes in silicon has been carried out by using a scanning photoacoustic (PA) microscope. PA signals were detected with ZnO transducer fabricated on back surface of a sample. We found a good correlation between PA topoeraphs and etch-Dit distribution due to OSF a I-. near the sample surface. about 70 um in the present PA microscope. In order to make a quantitative evaluation of surface recombination velocity and temperature rise of a Si sample, the Jackson-Amer model was extended to take account of intraband relaxation and diffusion of excess carriers and nonradiative recombination at surface and in bulk. We found the larger surface recombination velocity and the higher temperature rise in the vicinity of defects (OSF) near the surface of Si. Spatial resolution was
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