The solid solutions V1−x
Ti
x
O2 (0·02<-x<-0·4) which are monoclinic at room temperature (with the monoclinicity decreasing with increasing x) transform to rutile structures at Tt
. The Tt
, H as well as the conductivity jump (at Tt
) decrease with increase in x. Incorporation of 2 at.% of Nb (or Mo) lowers the Tt
of VO2 considerably, while 10% Nb stabilizes the high-temperature rutile structure. The high temperature rutile phases of all the solid solutions show semiconducting behavior indicating that the conductivity anomalies correspond to semiconductor-semiconductor transitions.
Meikang Han, Kathleen Maleski, Christopher E. Shuck, Yizhou Yang, James T. Glazar, Alexandre C. Foucher, Kanit Hantanasirisakul, Asia Sarycheva, Nathan C. Frey, Steven J. May, Vivek B. Shenoy, Eric A. Stach, Yury Gogotsi
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