Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena 255: 136-140
Article 2016 English
Authors
NV
Nandi Vrancken
GV
Guy Vereecke
SB
Stef Bal
Abstract
1 min read
This work focuses on capillary-induced collapse of high-aspect-ratio silicon nanopillars. Modification of the surface chemistry is demonstrated to be an efficient approach for reducing capillary forces and consequently reduce pattern collapse. Special effort is spent on determination of the wetting state of chemically modified surfaces as complete structure wetting is of utmost importance in wet processing. In light of this, an ATR-FTIR based method has been developed to unambiguously distinguish between wetting and non-wetting states.
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