p‐Type MoS₂ and n‐Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.