Oxygen-induced degradation of the electronic properties of thin-layer InSe
Article 2017 en
Authors
XW
Xin Wei
CD
Chaofang Dong
AX
Aoni Xu
Abstract
1 min read
The degradation of thin-layer InSe induced by O atoms was quantificationally studied by first-principles calculations and deformation potential theory from the aspects of structural relaxation, band structure, and carrier mobility.
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