Origin of extra diffraction spots for high crystalline alpha-Ga2O3
Article 2023 en
Authors
YL
Yong Hee Lee
DY
Duyoung Yang
BG
Byeongjun Gil
Abstract
1 min read
This work has investigated the microstructure characteristics of high-quality alpha-Ga2O3 thin film grown on the Al2O3 single crystal substrate membrane. Hetero-epitaxial alpha Ga2O3 crystals reveal the formation of a three-fold symmetry at the initial stage of the growth by the oxygen template provided by the Al2O3. Inversion domains are found, and they have a 180° inverted configuration from the surroundings. These IDs lead to extra diffraction spots when observed along [110] and [010].
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