Blue/near-UV light emitting diodes composed of position controlled n-ZnO nanowires arrays and a p-GaN thin film substrate are demonstrated. Under forward bias, each single nanowire is a light emitter. By Gaussian deconvolution of the emission spectrum, the origins of the blue/near-UV emission are assigned specifically to three distinct electron-hole recombination processes. The LEDs give an external quantum efficiency of 2.5%. Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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