Optimization of the Output Efficiency of GaN Nanowire Piezoelectric Nanogenerators by Tuning the Free Carrier Concentration

Carrier concentration in a piezoelectric semiconductor greatly affects alternating current (AC) piezoelectric nanogenerators (NGs) because of the carrier screening effect on the piezoelectric potential. The output performance of a series of NGs is investigated by tuning the Si dopant concentration in GaN nanowires. The results show a strong carrier screening effect that degrades output performance for high doping concentrations but results in high output power for low doping concentrations. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.