Numerical studies of semiconductor nanowire electrostatics

We present finite-element calculations of the electrostatics of NWFETs and numerical simulations of band bending, charge distributions, and dopant ion diffusion in NWs. For NWFETs, we find that the semiconducting nature and finite length of the NW warrant sizeable corrections to capacitance calculations using the standard analytical formula and simulations that assume a metallic NW. We thus provide a comprehensive set of correction factors to these approximations. We also present a possible mechanism for explaining non-uniform dopant distributions involving electrodiffusion of charged dopant ions at high temperatures. We find that changes in the internal NW electrostatics due to non-uniform dopant distributions can have significant effects on the free carrier concentration and therefore conductivity of semiconductor NWs.