Nonvolatile memory based on two-dimensional perovskite/organic polymer layered-heterojunction transistors

A nonvolatile memory device based on a layered-heterojunction transistor composed of two-dimensional Ruddlesden–Popper-phase perovskite and polymeric semiconducting films is fabricated. The intrinsic quantum wells in the two-dimensional perovskite act as charge-trapping layers to capture and store carriers when the device is biased, while the thin polymeric semiconducting film is the channel layer. The carrier transport and storage properties during gating are optimized, and the memory properties can be readily modulated. The memory device exhibits hysteresis transfer curves with a maximum storage window of 117 V and a current switching ratio of 102. The results reveal a simple and effective device structure and provide insights into the development of nonvolatile memory devices.