Non‐Volatile Control of 2DEG Conductivity at Oxide Interfaces

S.-I. Kim; Dai‐Hong Kim; Yoonjung Kim; Seon Young Moon; Min‐Gyu Kang; Jong Kwon Choi; Ho Won Jang; Seong Keun Kim; Ji‐Won Choi; Seok‐Jin Yoon; Hye Jung Chang; Chong‐Yun Kang; Suyoun Lee; Seong‐Hyeon Hong; Jin‐Sang Kim; Seung‐Hyub Baek

doi:10.1002/adma.201301097

Abstract

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The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2 Ti0.8 )O3 overlayer on 2DEG (LaAlO3 /SrTiO3 ), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

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Non‐Volatile Control of 2DEG Conductivity at Oxide Interfaces

Abstract

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