Non-destructive testing by absolute room temperature photoluminescence quantum efficiency of GaAs solar cells

Nondestructive room temperature photoluminescence (PL) measurements on semiconductors are an important characterization tool to evaluate material quality and study the opto-electronic conversion mechanism involved in devices such as light-emitting diodes, solar cells, etc. In this paper, the authors describe nondestructive PL characterization studies of partially processed GaAs solar cells. Such a tool is valuable in the process development of high performance solar cells.