Non-contact electrical characterization of low-resistivity p-type ZnSe:N grown by molecular beam epitaxy

R. M. Park; M. B. Troffer; Eli Yablonovitch; T. J. Gmitter

doi:10.1063/1.106181

Abstract

1 min read

The resistivity of p-type ZnSe:N/GaAs heteroepitaxial layers grown by molecular beam epitaxy using a nitrogen free-radical source has been determined as a function of both substrate temperature and the Zn-to-Se beam equivalent pressure (BEP) ratio employed during growth. Layer resistivities were determined using a noncontact inductive-coupling radio-frequency measurement technique that provided sheet conductivity data from which layer resistivities were calculated. A minimum resistivity of 0.75 Ω cm has been measured to date for p-type ZnSe:N material grown at 235 °C with a BEP ratio of 1:2. Such a resistivity would imply a free-hole density in the range 4×1017−8×1017 cm−3 assuming the hole mobility to be in the range 20−10 cm2 V−1 s−1, respectively.

Related publications

Preprint2022

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

Yunhe Bai, Yuanzhao Li, Jianli Luan, Ruixuan Liu, Wenyu Song, Yang Chen, Pengfei Ji, Qinghua Zhang, Fanqi Meng, Bingbing Tong, Lin Li, Yuying Jiang, Zongwei Gao, Lin Gu, Jinsong Zhang, Yayu Wang, Qi-Kun Xue, Ke He, Yan Feng, Xiao Feng

Article1996

High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy

C. H. Goo, W. S. Lau, Tow Chong Chong, L.S. Tan, Paul Kim Ho Chu

Article2023

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

Article2003

Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy

H. J. Lü, W. J. Schaff, L.F. Eastman, Junqiao Wu, Władek Walukiewicz, V. Cimalla, O. Ambacher

Preprint2024

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

Yunhe Bai, Yuanzhao Li, Ruixuan Liu, Jianli Luan, Yang Chen, Wenyu Song, Pengfei Ji, Cui Ding, Zongwei Gao, Qinghua Zhang, Fanqi Meng, Bingbing Tong, Lin Li, Tianchen Zhu, Lin Gu, Lili Wang, Jinsong Zhang, Yayu Wang, Qi-Kun Xue, Ke He, Feng Yang, Feng Xiao

Non-contact electrical characterization of low-resistivity <i>p</i>-type ZnSe:N grown by molecular beam epitaxy

Abstract

Discussion(0)

Related publications

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

Growth of <i>a</i>-plane InN on <i>r</i>-plane sapphire with a GaN buffer by molecular-beam epitaxy

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy