Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is approximately 7 V above room temperature.
Krystian Nowakowski, Hitesh Agarwal, Sergey Slizovskiy, Robin Smeyers, Xueqiao Wang, Zhiren Zheng, Julien Barrier, David Barcons Ruiz, Geng Li, Riccardo Bertini, Matteo Ceccanti, Iacopo Torre, Bert Jorissen, Antoine Reserbat‐Plantey, Kenji Watanabe, Takashi Taniguchi, Lucian Covaci, M. V. Miloševıć, Vladimir I. Fal’ko, Pablo Jarillo‐Herrero, Roshan Krishna Kumar, Frank H. L. Koppens
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