Multilayer Black Phosphorus/Hexagonal Boron Nitride/Graphene Heterostructure Metal–Insulator–Semiconductor Diode

Assembling two-dimensional (2D) crystals via weak van der Waals (vdW) interactions in a vertical stack reveals various exciting physical phenomena and becomes essential for high-performance electronic devices through band alignment modulation. These vdW heterostructures enable the creation of primary electronic components, such as diodes and transistors, facilitating multifunctional device integration on a single chip and offering significant potential for analog and digital electronics. This study demonstrates the potential of metal–insulator–semiconductor (MIS) diodes within 2D vdW heterostructures, focusing on a combination of black phosphorus (BP), thin hexagonal boron nitride (hBN), and graphene (Gr). The BP/hBN/Gr MIS diode is fabricated using a dry transfer method to vertically stack the layered materials. Comparative analysis with similar metal–semiconductor diodes reveals superior current rectification in the MIS diode, attributed to carrier tunneling at the interfaces. We evaluate the performance metrics, including the rectification ratio, ideality factor, and tunneling behavior, over a temperature range of 77–300 K. The device exhibits a rectification ratio of 3.5 × 102 and an ideality factor of 1.6. Our findings highlight the potential of MIS diodes in ultrathin nanoelectronics, offering insights for future advancements in electronic and optoelectronic devices.