Microstructure of Mg doped GaNAs alloys

Abstract Transmission Electron Microscopy of Mg doped GaN 1‐x As x samples, grown by MBE at low temperatures, show substantial structural changes for samples that are semi‐insulating and those with high or low conductivity. The conductive samples show p‐type conductivity as evidence from the positive thermopower values. All the Mg doped samples show phase segregation: cubic GaAs and GaN grains (a mixture of cubic and some hexagonal) phases within an amorphous matrix. The best conductive samples show cubic GaAs grains with high density of stacking faults embedded into an amorphous matrix. The samples that are less conductive have lower ratio of the amorphous to the crystalline phase of the samples and much lower density of stacking faults. Higher Mg concentration is expected in the amorphous parts of the samples The semi‐insulating samples that have either low Mg concentration or low As show grains of GaAs and GaN attached to each other with no evidence of the amorphous phase between them. There are no SFs in these grains. It is possible that the presence of the GaN between the GaAs grains lead to semi‐insulating material properties since p‐type doping of GaN is more difficult. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)