Microstructural Investigation and Magnetic Properties of p-type GaN Implanted with Mn+ Ions

In p-type GaN implanted with 5 × 1016 cm—2 dose of Mn+ ions, magnetization data after annealing showed ferromagnetic behavior at 10 K. The ferromagnetic signal for the sample annealed at 800 °C was stronger than the one at 900 °C, because of the predominant reaction of Mn with N atoms at 900 °C and the increase of the electron concentration with increasing annealing temperature. This suggests that ferromagnetism in Mn-implanted p-type GaN can be enhanced by optimising annealing temperature (< 900 °C).