Memristor-based random access memory: The delayed switching effect could revolutionize memory design

Frank Z. Wang; Leon O Chua; Na Helian

doi:10.1109/nvmts.2015.7457481

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Leon O Chua

University of California, Berkeley

Memristor-based random access memory: The delayed switching effect could revolutionize memory design

Article 2015 en

Authors

FW
Frank Z. Wang
Leon O Chua
University of California, Berkeley
NH
Na Helian

Abstract

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Frank Wang, Leon O. Chua, and Na Helian, 'Memristor-based random access memory: The delayed switching effect could revolutionize memory design' paper presented at the 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China 12-14 October 2015

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Memristor-based random access memory: The delayed switching effect could revolutionize memory design

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