Property measurements of individual nanowires are challenging due to the small sizes of the structures. Scanning probe microscopy has thus far been the dominant tool for the characterization of nanomaterial properties. We have developed an alternative novel approach that allows a direct measurement of the mechanical properties of individual nanowires by in situ transmission electron microscopy (TEM). The technique relies on the electric field induced mechanical resonance of the nanowire observed in TEM, as it directly correlates the atomic‐scale microstructure of the nanowire with its physical properties. In this paper, the measurement of Young's modulus for composite SiO2/SiC wires is reported. The experimental results are in agreement with theoretically expected values.
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