Measurement of internal quantum efficiency and surface recombination velocity in InGaN structures

M. J. Jackson; M. Boroditsky; Eli Yablonovitch; S. Keller; B.P. Keller; Steven P. DenBaars

doi:10.1109/leos.1997.645476

Back

Measurement of internal quantum efficiency and surface recombination velocity in InGaN structures

Article 2002 en

Abstract

1 min read

We report the first measurements of the spectrally resolved absolute internal luminescence quantum efficiency and surface recombination velocity of an InGaN-GaN multiquantum well (MQW) structures. The absolute external quantum efficiency is measured by referencing the measured photoluminescence (PL) from the sample with the reading measured from the laser off of the perfect 100% white lambertian reflector.

Discussion(0)

No comments yet. Be the first to comment.

Related publications

Article1996

Absolute internal quantum efficiency of an InGaN/GaN quantum well

C. Reese, Eli Yablonovitch, S. Keller, B.P. Keller, Steven P. DenBaars

Article1999

Coupling of InGaN quantum-well photoluminescence to silver surface plasmons

I. Gontijo, M. Boroditsky, Eli Yablonovitch, S. Keller, Umesh K. Mishra, Steven P. DenBaars

Article2017

Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect

Chunyan Jiang, Liang Jing, Xin Huang, Mengmeng Liu, Chunhua Du, Ting Liu, Xiong Pu, Weiguo Hu, Zhong Lin Wang

Article2025

Metal‐Insulator‐Semiconductor Structure‐Based InGaN/GaN Micro‐Light‐Emitting Devices with Superior External Quantum Efficiency

Jian Yin, Reza Chaji, Ding Li, Zhong Lin Wang, Md. Soyaeb Hasan, Dayan Ban

Article2002

Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Arup Neogi, Chang‐Won Lee, Henry O. Everitt, Takamasa Kuroda, Atsushi Tackeuchi, Eli Yablonovitch