MBE growth and characterization of SrGa[sub 2]S[sub 4]:Ce blue phosphor for thin-film electroluminescence

Abstract— In this paper, we report further investigations of the MBE growth and characterization of cerium‐doped strontium thiogallate (SrGa 2 S 4 : Ce). Using Sr, Ga 2 S 3 , and CeCl 3 as source materials the optimum growth conditions for single‐phase polycrystalline SrGa 2 S 4 film were found to be substrate temperatures of 550–560°C and Ga 2 S 3 /Sr beam equivalent pressure (BEP) ratios of 50–60. CeCl 3 /Sr flux (molecules cm −2 s −1 ) ratios of 0.01–0.1 were studied, and the optimum Ce doping concentration has been found to be about 3 at.%. Characterization of the structural, electrical, and optical properties by XRD, TEM, EDS, SIMS, and PL will be presented.