Magnetoresistance in Metallic Ferroelectrics

Polar metals with ferroelectric-like displacements in metals have been achieved recently, half a century later than Anderson and Blount’s prediction. However, genuine ferroelectricity with electrical dipolar switching has not yet been attained experimentally in conducting materials, especially the ones possessing magnetic responses. Here we report the coexistence of ferroelectricity and magnetoresistance (MR) in metallic PbNb0.12Ti0.88O3 (PNTO) thin films. We found that the conducting and magnetic responses of PNTO films are highly asymmetric. Negative MR up to 50% is observed under an in-plane magnetic field; the MR switches to positive with the magnetic field applied parallel to the surface normal. Such unique behavior is attributed to the moving electron caused effective magnetic field, which couples with the spins of electrons, which form a dynamic multiferroic state in the metallic PNTO. These findings break a path to multiferroic metal and offer a great potential for multifunctional devices.