<title>New aqueous base-developable negative-tone photoresist based on furans</title>

A new versatile negative-tone resist consisting of poly [4- hydroxystyrene-co-4-(3-furyl-3-hydroxypropyl)styrene], and a photoacid generator is described. This chemically amplified resist which shows high sensitivity in the deep-UV (2.3 mJ/cm2) and E-Beam (3.4 (mu) C/cm2) modes, operates on the basis of radiation induced crosslinking via acid-catalyzed electrophilic aromatic substitution. Due to the incorporation of phenolic substituents in the resist design aqueous development without swelling is possible.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.