Low-Temperature Solution-Phase Growth of Silicon and Silicon-Containing Alloy Nanowires

Low-temperature synthesis of crystalline silicon and silicon-containing nanowires remains a challenge in synthetic chemistry due to the lack of sufficiently reactive Si precursors. We report that colloidal Si nanowires can be grown using tris(trimethylsilyl)silane or trisilane as the Si precursor by a Ga-mediated solution-liquid-solid (SLS) approach at temperatures of about 200 °C, which is more than 200 °C lower than that reported in the previous literature. We further demonstrate that the new Si chemistry can be adopted to incorporate Si atoms into III-V semiconductor lattices, which holds promise to produce a new Si-containing alloy semiconductor nanowire. This development represents an important step toward low-temperature fabrication of Si nanowire-based devices for broad applications.