Low Lattice Mismatch InSe–Se Vertical Van der Waals Heterostructure for High‐performance Transistors via Strong Fermi‐Level Depinning (Small Methods 8/2020)

In article number 2000238, Hong Liu, Lin Han, and co-workers present InSe-Se vertical van der Waals (vdW) heterostructures to address a formidable contact engineering challenge, which have a low lattice mismatch of 1.1% and form 2D/2D low-resistance vdW contacts, creating an InSe contact interface that substantially limits chemical disorder and Fermi-level pinning.