Low-Frequency Resistance Noise in Near-Magic-Angle Twisted Bilayer Graphene

The low-frequency resistance fluctuations, or noise, in electrical resistance not only set a performance benchmark in devices but also form a sensitive tool to probe nontrivial electronic phases and band structures in solids. Here, we report the measurement of such noise in the electrical resistance in twisted bilayer graphene (tBLG), where the layers are misoriented close to the magic angle (θ ∼ 1°). At high temperatures (<i>T</i> ≳ 60-70 K), the power spectral density (PSD) of the fluctuation inside the low-energy moiré bands is predominantly ∝1/<i>f</i>, where <i>f</i> is the frequency, being generally lowest close to the magic angle, and can be well-explained within the conventional McWhorter model of the '1/<i>f</i> noise' with trap-assisted density-mobility fluctuations. At low <i>T</i> (≲10 K), the measured noise exhibits a strong two-level random telegraphic signal (RTS), especially close to the moiré gap, which exhibits a ∝1/<i>f</i>²-like PSD that can be attributed to poorly screened resonances of the Fermi energy to specific bands of defects in the encapsulating boron nitride (hBN) layers. The low-<i>T</i> noise within the moiré band exhibits a series of minima at the integral as well as half-integral fillings, which align with the frequently observed van Hove singularities in the density-of-states driven by strong Coulomb interaction. Apart from providing a comprehensive account of the origin and the magnitude of noise in tBLG, our experiment also reveals noise to be significantly more sensitive to the underlying interaction effects in tBLG than the conventional time-averaged transport.