Local vibration at the surface of a Ge nanocrystal embedded in a silicon oxide matrix

A low-frequency Raman vibration mode, whose peak position and linewidth are independent of the sizes of Ge nanocrystals and the polarization configuration of incident excitation light, was observed in silicon oxide films embedded with Ge nanocrystals which were prepared using magnetron cosputtering of SiO2–Ge–Si targets. The peak position of the Raman mode is sensitive to the content of Si in the matrix. After the sample is annealed above a special temperature that increases with the content of Si, the Raman mode disappears. Microstructural observations and spectral analyses disclose that this low-frequency Raman mode arises from a local structure which is positioned at the surfaces of Ge nanocrystals and consists of Ge, Si, and O atoms. High-temperature annealing leads to the removal of Ge atoms from the local structure. As a result, the local vibration mode vanishes.