Laser enabled ultra-high doping patterns in graphene for rewritable photodetectors

Abstract Chemical doping has been extensively studied for control of charge carrier polarity and concentration in two-dimensional (2D) van der Waals materials. However, conventional routes by substitutional doping or absorbed molecules suffer from degradation of the electrical mobility due to structural disorder, while the maximum doping density is set by the solubility limit of dopants. Here, we show that laser assisted chlorination can achieve high doping concentration (> 3×10 13 cm − 2 ) in graphene monolayer with minimal mobility drop, while holding reversibility and spatial selectivity. Such superior doping scheme is enabled by two lasers with selected photon energies and geometric configurations, resulting to high Cl coverage ratio (C 2 Cl) and subsequent local Cl-removal without damaging graphene. Based on this method, we demonstrate rewritable graphene photodetector, manifesting high quality reversible doping patterns in graphene. We believe that the presented results offer a new route for chemical doping of 2D materials that may enable exotic optoelectronic applications.