Large bandgap of pressurized trilayer graphene

Significance The remarkable physical properties of graphene make it a marvel of materials science. However, the gapless character of graphene makes it impossible to be a strong contender for postsilicon electronics. Opening a sizable bandgap in graphene is hence highly desired. We developed a microwiring technique for high-pressure electrical measurement on nanomaterials with only a few layers. Through in situ electrical and absorption studies we demonstrate that an intrinsic bandgap of 2.5 eV is achievable in compressed Bernal-stacked trilayer graphene. The realization of a wide bandgap in compressed graphene stimulates explorations for the practical application of carbon-based electronic devices.