(Invited) 2-Dimensional Halide Perovskite Memristors for Data Storage and Neuromorphic Computing

Halide perovskites, fascinating memristive materials owing to mixed ionic-electronic conductivity, have been attracting great attention as nonvolatile data storage and artificial synapses recently. However, polycrystalline nature in thin film form and instability under ambient air hamper them to be implemented in demonstrating reliable electronic devices. We successfully fabricated vertically aligned 2D halide perovskite films (V-HPs) for active layers of ReRAM and artificial synapses, showing moisture stability. Unlike random-oriented HPs, which exhibit negligible current hysteresis, V-HPs with Ag top electrodes exhibited highly stable and reliable binary memory performance. We built a flexible crossbar array to verify data storage capability, achieving a high (~100 %) device yield, robust endurance (5 × 10 6 cycles), long retention (2 × 10 5 s), reliability to operate under bending conditions, and moisture stability over a year. V-HPs with Au top electrodes showed multilevel analog memristive characteristics, programmable potentiation and depression with distinguished multi-states, long-short-term plasticity, paired-pulse facilitation, and even spike-timing-dependent plasticity. Our findings provide material design strategy that can be extended to the development of new semiconductor materials for next-generation memory devices.