Interfacial electronic states and self-formed p–n junctions in hydrogenated MoS<sub>2</sub>/SiC heterostructure
Article 2018 en
Authors
QF
Qinglong Fang
XZ
Xumei Zhao
YH
Yuhong Huang
Abstract
1 min read
It is difficult to generate p–n junctions in atomically thin transition metal dichalcogenides (TMDs) because of the great challenge of selective doping.
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