Interface-engineered hole doping in Sr₂IrO₄/LaNiO₃ heterostructure

Abstract The relativistic Mott insulator Sr 2 IrO 4 driven by large spin–orbit interaction is known for the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>J</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>eff</mml:mi> </mml:mrow> </mml:msub> <mml:mo>=</mml:mo> <mml:mn>1</mml:mn> <mml:mrow> <mml:mo stretchy="true">/</mml:mo> </mml:mrow> <mml:mn>2</mml:mn> </mml:math> antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we report the realization of hole-doped Sr 2 IrO 4 by means of interfacial charge transfer in Sr 2 IrO 4 /LaNiO 3 heterostructures. X-ray photoelectron spectroscopy on Ir 4 f edge along with the x-ray absorption spectroscopy at Ni L 2 edge confirmed that 5 d electrons from Ir sites are transferred onto Ni sites, leading to markedly electronic reconstruction at the interface. Although the Sr 2 IrO 4 /LaNiO 3 heterostructure remains non-metallic, we reveal that the transport behavior is no longer described by the Mott variable range hopping mode, but by the Efros–Shklovskii model. These findings highlight a powerful utility of interfaces to realize emerging electronic states of the Ruddlesden–Popper phases of Ir-based oxides.