Insulating SiO₂ under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Graphene on SiO₂ enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO₂ film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO₂ film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO₂ has been produced. The insulating nature of the thick amorphous SiO₂ is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within <i>in situ</i> fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.