In0.30Al0.70As/In0.30Ga0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxy

Paul Kim Ho Chu; Chia‐Liang Lin; H. H. Wieder

doi:10.1016/0040-6090(88)90376-8

Related publications

Preprint2024

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

Yunhe Bai, Yuanzhao Li, Ruixuan Liu, Jianli Luan, Yang Chen, Wenyu Song, Pengfei Ji, Cui Ding, Zongwei Gao, Qinghua Zhang, Fanqi Meng, Bingbing Tong, Lin Li, Tianchen Zhu, Lin Gu, Lili Wang, Jinsong Zhang, Yayu Wang, Qi-Kun Xue, Ke He, Feng Yang, Feng Xiao

Preprint2025

$WSe_2$ Monolayers Grown by Molecular Beam Epitaxy on hBN

Julia Kucharek, Mateusz Raczyński, R. Bożek, Anna Kaleta, B. Kurowska, Marta Bilska, S. Kret, Takashi Taniguchi, Kenji Watanabe, P. Kossacki, M. Goryca, W. Pacuski

Article2025

WSe <sub>2</sub> Monolayers Grown by Molecular Beam Epitaxy on hBN

Julia Kucharek, Mateusz Raczyński, R. Bożek, Anna Kaleta, B. Kurowska, Marta Bilska, S. Kret, Takashi Taniguchi, Kenji Watanabe, P. Kossacki, M. Goryca, W. Pacuski

Article2007

High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

Xiaohong Zhang, Benoît Domercq, Xudong Wang, Seunghyup Yoo, Takeshi Kondo, Zhong Lin Wang, Bernard Kippelen

Article2004

Ge films grown on Si substrates by molecular-beam epitaxy below 450 °C

J. Liu, H. J. Kim, O. Hulko, Ya‐Hong Xie, Subal Sahni, Prabhakar R. Bandaru, Eli Yablonovitch