Improved oxidation resistance of Ru/Si capping layer for extreme ultraviolet lithography reflector
Article 2011 en
Authors
JP
Jeong Young Park
LB
Leonid Belau
HS
Hyungtak Seo
Abstract
1 min read
The authors report on the chemical durability and oxidation resistance of Ru/Si, Ru/B, Ru/C, and Ru capping layers on the extreme ultraviolet (EUV) reflector surface. Surface etching and changes in the oxidation state were probed with x-ray photoelectron spectroscopy. The changes in surface morphology and roughness are characterized using scanning electron microscopy and atomic force microscopy. Out of four different capping layers, Ru/Si layers exhibited the least surface oxidation after oxygen plasma and UV/ozone treatment, indicating a superior oxidation resistance. The authors found that the reflectivity of the Ru/Si capped reflector is similar to that of a bare Ru capped reflector. This study suggests that a Ru/Si layer can be an excellent capping layer for the EUV reflector.
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