Implantation dynamics of plasma implantation into insulating strips

Plasma immersion ion implantation (PIII) of insulating materials is quite challenging because of surface charging and capacitance effects. In this paper, we conduct a two-dimensional plasma–sheath simulation of PIII into insulating strips that have practical industrial applications. Our results reveal distortion of the plasma sheath above the parallel strips. Consequently, there exist horizontal components of the ion velocity affecting the implantation results in terms of both the incident ion dose and the penetration depth. The strip dimension is also found to exert a considerable influence on the implantation dynamics. When the strip is wider, the ion dose in the insulating strip is higher but the difference in the vertical velocity is quite small. This illustrates the importance of sample placement in the implantation process.