Abstract Mid-infrared (mid-IR) photodetectors play a crucial role in various applications, including the development of biomimetic vision systems that emulate neuronal function. In this work, we demonstrate a new infrared photodetector based on graphene/boron nitride/graphene tunneling heterostructure combining perception and memory functions. The detection principle is based on the shift of the N -shaped tunneling resonant feature in the I - V –curve upon infrared illumination. In the current-biased mode, such a shift results in a strong voltage “jump” (0.05−1 V) to another branch of the I - V –characteristic that persists after switching the radiation off. As a result, the structure can be considered as a visual neuron that combines perception and memory functions. More interestingly, the direction of voltage switching depends on laser beam position, adding extra recognition functionality to our perception device. The observed phenomena are explained within the theory of selective light-induced heating of electrons in the graphene layers, and the tunneling of hot carriers.
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