High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene (Adv. Funct. Mater. 12/2022)

Analog Resistive Memories In article number 2109970, Armantas Melianas, Armin VahidMohammadi, Alberto Salleo, Mahiar Max Hamedi, and co-workers present the world's first electrochemical transistor memory based on 2D materials (MXene). These transistors can be used for neuromorphic computers, where they are a thousand times faster than previous ionic memories and other state-of-the-art technologies like resistive- or phase-change memristors (Image credit: Armin VahidMohammadi).