High-speed InP/GaInAs photodiode on sapphire substrate
Article 1989 en
Authors
HS
H Schumacher
TG
T.J. Gmitter
HL
H.P. LeBlanc
Abstract
1 min read
Using epitaxial lift-off by selective wet-chemical etching, we have transferred an InP/GalnAs photodiode onto a sapphire substrate. The transferred diode shows an estimated 13.5 GHz bandwidth and 90% internal quantum efficiency. Our technique has promising applications in highperformance optoelectronic circuits for fibre-optic communications systems combining device from different material systems.
Garry W. Mudd, Simon A. Svatek, Lee Hague, O. Makarovsky, Z. R. Kudrynskyi, Christopher J. Mellor, Peter H. Beton, L. Eaves, Konstantin ‘kostya’ Novoselov, Z. D. Kovalyuk, Evgeny E. Vdovin, Alexander J. Marsden, Neil R. Wilson, A. Patanè
Zewdu M. Gebeyehu, Vaidotas Mišeikis, Stiven Forti, Antonio Rossi, Neeraj Mishra, Alex Boschi, Yurii P. Ivanov, Leonardo Martini, Michał W. Ochapski, Giulia Piccinini, Kenji Watanabe, Takashi Taniguchi, Giorgio Divitini, Fabio Beltram, Sergio Pezzini, Camilla Coletti
.webp){kind=small}
Discussion(0)
No comments yet. Be the first to comment.