High-speed InP/GaInAs photodiode on sapphire substrate

H Schumacher; T.J. Gmitter; H.P. LeBlanc; R. Bhat; Eli Yablonovitch; M.A. Koza

doi:10.1049/el:19891108

Abstract

1 min read

Using epitaxial lift-off by selective wet-chemical etching, we have transferred an InP/GalnAs photodiode onto a sapphire substrate. The transferred diode shows an estimated 13.5 GHz bandwidth and 90% internal quantum efficiency. Our technique has promising applications in highperformance optoelectronic circuits for fibre-optic communications systems combining device from different material systems.

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