High‐Performance Optoelectronics: Lateral 2D WSe₂ p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance Optoelectronics (Adv. Mater. 9/2020)

In article number 1906499, Yuyan Wang, Junying Zhang, and co-workers achieve novel and facile electron doping of 2D WSe2 by cetyltrimethyl ammonium bromide to form a high-quality lateral p–n homojunction with superior optoelectronic properties. The high switching light ratio, superior photoresponsivity, and specific detectivity of the device demonstrate its promising application for high-sensitivity photodetectors and low-power photoelectronic devices.