H DISTRIBUTION AND STRAIN EVOLUTION IN SiGe/Si HETEROSTRUCTURE IMPLANTED BY H DIMERS

A 75nm Si 0.84 Ge 0.16 film was grown at 500°C with Si 2 H 6 and GeH 4 precursors. After depositing an oxide layer on the top, the samples were implanted with [Formula: see text] ions at an energy of 38keV, and a dose of 3.5 × 10 16 cm -2 . These implanted samples were annealed in the temperature range from 400°C to 700°C. H redistribution occurs during this process. Meanwhile, great tensile strain was introduced by implantation into the SiGe/Si heterostructure layers and following annealing relieved the strain. High temperature annealing almost fully relaxed the SiGe layer.