Graphene: Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices (Small 28/2017)

In article number 1700929, by Peng Zhou, Zengfeng Di, and co-workers, graphene with the desired pattern is produced on arbitrary dielectric substrates by a semiconducting, germanium-assisted, chemical vapor deposition approach, in which the complete sublimation of the catalytic Ge layer occurs during or immediately after the formation of the monolayer graphene.